SBIR-STTR Award

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Enabling Industry scalable GaN-based Technology for Heterogeneous Integration of RF power devices Via van der Waals 2D h BN Release layer
Award last edited on: 11/6/2023

Sponsored Program
SBIR
Awarding Agency
DOD : AF
Total Award Amount
$1,249,027
Award Phase
2
Solicitation Topic Code
AF221-DCSO1
Principal Investigator
Andrei Osinsky

Company Information

Agnitron Technology Inc

6595 Edenvale Boulevard Suite 180
Eden Prairie, MN 55346
   (952) 937-7505
   sales@agnitron.com
   www.agnitron.com
Location: Single
Congr. District: 03
County: Hennepin

Phase I

Contract Number: FA8649-22-P-0963
Start Date: 5/4/2022    Completed: 2/9/2024
Phase I year
2022
Phase I Amount
$1
Direct to Phase II

Phase II

Contract Number: FA8649-22-P-0963
Start Date: 5/4/2022    Completed: 2/9/2024
Phase II year
2022
Phase II Amount
$1,249,026
Gallium nitride (GaN) monolithic microwave integrated circuits (MMICs) continue to be the best solution for high power/high-frequency RF/microwave needs due to its high-power RF performances. However, GaN has presented difficulties of not being able to be