SBIR-STTR Award

Pulsed Sputter Deposition (PSD) for Efficient Doping in Gallium Nitride (GaN) Epiwafers
Award last edited on: 12/20/2021

Sponsored Program
SBIR
Awarding Agency
DOD : AF
Total Award Amount
$800,000
Award Phase
2
Solicitation Topic Code
J201-CSO1
Principal Investigator
Heather Splawn

Company Information

Kyma Technologies Inc (AKA: Carolina Sputter Solutions)

8829 Midway West Road
Raleigh, NC 27612
   (919) 789-8880
   info@kymatech.com
   www.kymatech.com
Location: Multiple
Congr. District: 02
County: Wake

Phase I

Contract Number: FA8649-20-P-0551
Start Date: 3/9/2020    Completed: 6/9/2020
Phase I year
2020
Phase I Amount
$50,000
Gallium nitride (GaN) epiwafers are used to make RF microwave monolithic integrated circuits (MMICs) in military radar systems, LEDs in TVs and solid state lighting, and many other applications. Kyma pulsed sputter deposition (PSD) GaN epiwafers have many advantages over existing MOCVD GaN epiwafer growth techniques. During Phase I, Kyma will identify customers and key technical specifications for high quality Gallium Nitride (GaN) epitaxial material for RF (MMICs) and power electronics applications.

Phase II

Contract Number: FA8649-21-P-0792
Start Date: 3/10/2021    Completed: 3/10/2022
Phase II year
2021
Phase II Amount
$750,000
Gallium nitride (GaN) represents a critical semiconductor technology for a number of defense and non-defense applications such as advanced radar systems, missile guidance, satellite communications, GPS, surveillance, wireless base stations, 5G, and much m