SBIR-STTR Award

This Phase I program sets out to capitalize on recent advances in epitaxial growth of -Ga2O3 which have the potential to significantly improve upon the performance of currently available power electronics devices. Specifically, -Ga2O3, offers fundamental properties such as its ability to withstand very large electric fields that suggest its use as a power electronics material will lead to device performance beyond even that of SiC and GaN. We propose to determine the growth parameters that yield high quality, doped -Ga2O3 epitaxial layers and (AlxGa1-x)2O3/-Ga2O3 epitaxial heterostructures. That is, MOSFET and HEMT structures. For this program we have assembled a team of renowned scientists with expertise in the growth and characterization of semiconductor oxides.

This Phase II program sets out to capitalize on recent advances in epitaxial growth of -Ga2O3 which have the potential to significantly improve upon the performance of currently available power electronics devices. Specifically, -Ga2O3, offers fundamental properties such as its ability to withstand very large electric fields that suggest its use as a power electronics material will lead to device performance beyond even that of SiC and GaN. We propose to determine the growth parameters that yield high quality, doped -Ga2O3 epitaxial layers and (AlxGa1-x)2O3/-Ga2O3 epitaxial heterostructures on bulk (010) -Ga2O3 substrates. These structures will be optimized to enhance the properties of the MOSFET and HEMT (also known as MODFET) devices that can be fabricated from them. For this program we have assembled a team of renowned scientists with expertise in the growth and characterization of semiconductor oxides as well as device fabrication.