The road to graphene based electronics as identified in the 2007 ITRS road map hinges on the ability to grow electronically single sheet graphene over large areas with high uniformity. Graphene Works in collaboration with the Georgia Institute of Technology has pioneered the growth and characterization of high quality graphene films grown on both polar faces of SiC. Under this STTR, this partnership will demonstrate the growth of high quality graphene films on SiC that have the electronic properties of a single graphene sheet. These films will be produced in a proprietary furnace method that is expected to scale to 5cm diameter SiC wafers by the end of this research effort. High mobility graphene samples (>10^5 cm^2/Vs) will be produced by this method on both standard and preprocessed SiC substrates. BENEFIT
Keywords: Graphene, Epitaxial Graphene Growth
