The goal of the Phase I program is to demonstrate the feasibility of our technical approach to grow AlInN lattice Matched Barrier HEMTs on low defect Bulk and quasi-bulk III-Nitride Substrates (GaN). This will be accomplished using our pulsed MOCVD growth technique to deposit AlInN films at a higher growth temperature than conventional MOCVD deposition methods, resulting in better material quality. The developed material technology will be scaled-up to 2 diameter substrates in Phase II. In Phase II program we will also use the material from Phase I to develop robust sub-micron insulating gate HEMTs. The suitability of their insertion in military systems will be established via a joint processing and device testing program with DOD test labs (WPAFB and the Joint Services Task Team). In Phase III program we will develop a large volume manufacturing technology for epitaxial wafer supply to DoD and commercial outfits in a strategic partnership with a large company. BENEFIT
Keywords: Alinn, Lattice Matched, Hemts, Low Dislocation Density, Bulk Substrates
