SBIR-STTR Award

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Micropipe-free silicon carbide (SiC) substrates for high power (>10kV) electronics
Award last edited on: 5/16/2011

Sponsored Program
SBIR
Awarding Agency
DOD : AF
Total Award Amount
$1,228,025
Award Phase
2
Solicitation Topic Code
SB032-044
Principal Investigator
Cem Basceri

Company Information

INTRINSIC Semiconductor Corporation

22660 Executive Drive Suite 101
Sterling, VA 20166
   (703) 437-4000
   sales@intrinsicsemi.com
   www.intrinsicsemi.com
Location: Single
Congr. District: 10
County: Loudoun

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
2004
Phase I Amount
$98,935
Development of ultra pure silicon carbide (SiC) substrates that are electrically insulating will be pursued under the SBIR Phase I program. The Company has developed a unique and proprietary technique for making such substrates. A number of characterization tasks will also be performed on the wafers produced under to proposed effort.

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
2006
Phase II Amount
$1,129,090
Based on the successful proof of co

Keywords:
Single Crystal Silicon Carbide (Sic) Growth, Single Crystal Silicon Carbide (Sic) Substrate, 4h Polytype, Micropipes, Power Electronics, Large Area Wi