An advanced solution growth process is proposed for the growth of thick (2- to 3 -mm) bulk crystals of low-bandgap (mid-infrared) III-V ternary and quaternary alloys including InAsSb, InGaAsSb, AlGaAsSb, and InAsSbP with diameters larger than 2.5 cm. The solution growth process represents several new adaptations of state-of-the-art liquid-phase epitaxy and bulk growth techniques, and incorporates a combination of optimized growth solution compositions, epitaxial lateral overgrowth on patterned, masked substrate seeds, solute feeding with source materials, temperature gradient growth, temperature cycling of the growth solution, and current-induced solute electromigration. These features are utilized to achieve a wider range of alloy compositions, reduced defects and impurities, high growth rates, and controlled solute segregation for improved compositional uniformity
