SBIR-STTR Award

Multi-Wavelength Guided-wave Optoelectronic Interconnects for High-throughput Optical Memories
Award last edited on: 5/20/02

Sponsored Program
SBIR
Awarding Agency
DOD : AF
Total Award Amount
$842,231
Award Phase
2
Solicitation Topic Code
AF99-110
Principal Investigator
Bipin Bihari

Company Information

Radiant Photonics Inc (AKA: Radiant Research Laboratory~Radiant Research Inc)

1908 Kramer Lane Suite A
Austin, TX 78758
   N/A
   contact@radiantr.com
   N/A
Location: Single
Congr. District: 10
County: Travis

Phase I

Contract Number: F30602-99-C-0111
Start Date: 4/22/99    Completed: 1/22/00
Phase I year
1999
Phase I Amount
$98,855
Optical storage systems and memories are emerging rapidly as a solution to address the next generation requirement of high data-density and fast access time, and have created demand for high-speed and large-volume data handling interconnects between optical memory devices and processors. Electrical interconnects fail to keep up with this new demand due to their basic limitations. Optical interconnects and devices inherently offer large bandwidth and hence high-speed operation. Radiant Research, Inc., proposes to construct a multi-wavelength-based interconnect for interfacing optical memories and processors using guided-wave technology in conjunction with VCSELs, Photodiodes, wavelength division (de)multiplexing (W(D)DM) devices and multimode fibers. Employment of the WDDM device significantly increases the aggregate bandwidth to well above 10 Gb/sec while minimizing the latency of data transfer. Furthermore, the employment of an innovative three-dimensionally-tapered waveguide will significantly reduce the system insertion loss and thus achieve high fidelity of data transmission. Experimental result shows that each WDDM wavelength channel can provide 2,500 Gb/sec. Consequently, the projected target of throughput enhancement will be achieved. Important benefits of this approach are significantly improved device performance in the context of data transfer for 3D-optical memory, relaxed fabrication tolerance and reduced cost.

Keywords:
High-Speed Data Transport Integrated Optoelectronics Low-Loss Coupling Optoelectronic Interconnect P

Phase II

Contract Number: F30602-00-C-0028
Start Date: 3/27/00    Completed: 3/27/02
Phase II year
2000
Phase II Amount
$743,376
Optical storage and memories are emerging rapidly as a solution to address ever increasing demands for large storage capacity, high data-density and fast access time. The electronic logic elements in the processors can operate at speeds exceeding one GHz. However, these high-speed elements are severely constrained by conventional electrical interconnect bandwidth bottlenecks in the transporting of data-streams from one device to another. Optical and electro-optical hybrid interconnection schemes provide an opportunity to overcome the bottleneck, while maintaining cost-effectiveness and technological acceptance to industry.Radiant Research, Inc., proposes to construct a multi-wavelength-ased interconnect for interfacing optical memories and processors using guided-wave technology in conjunction with VCSELs, photodiodes, wavelength division (de)multiplexing (W(D)DM) devices and multimode fibers. We will demonstrate a 32 channel dense WDM device with an aggregate bandwidth of 64 GHz (32x2 GHz) for optical memory to processor interconnection while minimizing the latency of data transfer. Important benefits of this approach are significantly improved data transfer rates for 3D-optical memory, reliable system packaging, and reduced cost. Strong industry support from Honeywell, Cray Research, and Newport Corp. are committed for this program, including both cash and in-kind contributions.

Keywords:
Optoelectronic Interconnectlow-Loss Coupling Integrated Optoelectronics Polymer-Based Photonics Wddm