SBIR-STTR Award

On-Line Hydride Gas Process Monitor for Compound Semiconductor and Silicon Wafer Fabrication
Award last edited on: 7/12/2002

Sponsored Program
SBIR
Awarding Agency
DOD : DARPA
Total Award Amount
$70,576
Award Phase
1
Solicitation Topic Code
DARPA93-005
Principal Investigator
William M Ayers

Company Information

Electron Transfer Technologies

155 Campus Plaza
Edison, NJ 08818
   (732) 225-3995
   wmaett@aol.com
   www.pingsite.com/ett
Location: Single
Congr. District: 06
County: Middlesx

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
1994
Phase I Amount
$70,576
The fabrication of III-IV compound semiconductors, such as GaAs, and silicon semiconductors requires the use of the hydride gases phosphine and arsine. The accurate sensing of the concentration of these gases is essential for high yield device fabrication. Presently the only methods for detecting these gases for on-line process control are very expensive sensor units. In Phase I of these project, we propose the investigation of several new sensing techniques to develop a low cost (<$3000) hydride gas sensor for on-line process control and monitoring. In Phase II we will construct prototype hydride sensors and test them at several major semiconductor fabrication facilities. Anticipated

Benefits:
The development of a low cost on-line arsine and phosphine concentration sensor will improve semiconductor manufacturing efficiency through greater wafer yields.

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
----
Phase II Amount
----