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SBIR-STTR Award
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SBIR-STTR Award
3
High Resolution SWIR Electro-Optical Seeker
Award last edited on: 8/22/22
Sponsored Program
SBIR
Awarding Agency
DOD : OSD
Total Award Amount
$1,649,733
Award Phase
2
Solicitation Topic Code
OSD181-002
Principal Investigator
Martin H Ettenberg
Company Information
Princeton Infrared Technologies Inc
9 Deer Park Drive
Monmouth Junction, NJ 08852
(609) 917-3379
N/A
www.princetonirtech.com
Location:
Single
Congr. District:
12
County:
Middlesx
Phase I
Contract Number:
HQ003419P0059
Start Date:
3/7/19
Completed:
9/6/19
Phase I year
2019
Phase I Amount
$149,966
A 1280x1024 on 8 µm pitch seeker with 0.4 to 2.6 µm detection capability will be incorporated with electronics and a Bayer mosaic of polarizing filters to allow real time target discrimination at rapid closure rates. The imager will have peak sensitivity greater than 60% and dark current of less than 6 µA/cm2 at 273 K. The camera will have greater than 99% pixel operability with a 12 bit digital output at over 300 fps at full resolution and >1000 fps when windowed to 512x512. The imager will be manufactured on InP substrates using the InGaAs/GaAsSb system allowing for low cost and the ability to leverage modern III-V processing. The imager will be integrated with the filter during photodiode production to minimize cost and improve filter alignment accuracy. Real time image processing of polarized imager will be enabled in the low SWaP camera electronics, providing unprecedented detection of targets in the visible and short wave infrared bands simultaneously. The seeker with wide field of optics and processing space for advanced tracking algorithms will be able to survive the rigors of launch and high speed trave
Phase II
Contract Number:
HQ003421C0004
Start Date:
3/18/21
Completed:
3/17/23
Phase II year
2021
Phase II Amount
$1,499,767
A 1280x1024 on 8 µm pitch seeker with 0.4 to 2.6 µm detection capability will be incorporated with electronics to allow real time target discrimination at rapid closure rates. The imager will have peak sensitivity greater than 60% and dark current of less than 6 µA/cm2 at 273 K. The camera will have greater than 99% pixel operability with a 12 bit digital output at over 300 fps at full resolution and >1000 fps when windowed to 512x512. The imager will be manufactured on InP substrates using the InGaAs/GaAsSb system allowing for low cost and the ability to leverage modern III-V processing. The imager will be manufactured and hybridized at the wafer scale to allow for future integration of pixel by pixel filtering technology during production to minimize cost and improve filter alignment accuracy. The seeker with wide field of optics and processing space for advanced tracking and filter processing and pixel fusion algorithms will be able to survive the rigors of launch and high speed trav
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