Company Profile

Kyma Technologies Inc (AKA: Carolina Sputter Solutions)
Profile last edited on: 4/24/25      CAGE: 1E4G3      UEI: GDV6R1VLRVN7

Business Identifier: Crystalline and polycrystalline nitride semiconductor materials
Year Founded
1998
First Award
1998
Latest Award
2022
Program Status
Active
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Location Information

8829 Midway West Road
Raleigh, NC 27612
   (919) 789-8880
   info@kymatech.com
   www.kymatech.com
Location: Multiple
Congr. District: 02
County: Wake

Public Profile

A spin-off from North Carolina State's Department of Materials, Science and Engineering./ NVCA Kyma Technologies, Inc. (Kyma) is a materials science company manufacturing and supplying crystalline and polycrystalline nitride semiconductor materials. Principals of the firm has developed a powerful portfolio of aluminum nitride (AlN) and gallium nitride (GaN) substrate products in accordance with pressing near term and long term nitride semiconductor market needs: the firm's AlN templates are thin layers of AlN grown on sapphire, silicon, or silicon carbide, are transitioning from prototype to volume production and offer a low cost improved nucleation surface that reduces the cost and cycle time for epitaxial growth. Kyma’s GaN templates thin layers of GaN grown on AlN templates and are also transitioning from prototype to volume production and provide additional benefits, offering additional cycle time reduction plus 100x improvement in epitaxial layer quality. Kyma’s bulk GaN substrates are transitioning from development to prototype production and represent the ultimate solution for most nitride semiconductor device applications, offering a 10,000x improvement in epitaxial layer quality. Recently Kyma has added additional products and services to its product offering, including custom crystal fabrication, diamond wire fabrication, and custom deposition equipment design and manufacturing. Kyma’s products and processes are protected by a 1 held and 2 licensed patents, with 7 other patents pending. Additionally, Kyma is in the process of closing on the acquisition of crystal growth process IP (11 patents) and associated equipment for fabrication of advanced III-N heteroepitaxial wafers. Large companies can benefit from a partnership with Kyma in several different ways: access to the most innovative GaN and AlN templates and bulk GaN substrates in the market today, specialty materials processing, and advanced heteroepitaxial wafers. Also, since Kyma has great partnerships in place with about 2 dozen leading academic research groups and government laboratories, plus has great relationships with many other companies in the wide bandgap materials and device space, Kyma can serve as a one-stop partner who can reach out to other partners as needed to satisfy the needs of the large company. For example, we can get world-class epitaxial device layers grown on our world-class materials from an academic partner and then get the device fabricated by an outside merchant packaging firm. Kyma has, with help from its many collaboration partners, demonstrated the benefits of its products in a broad range of applications including light emitting diodes (LEDs), laser diodes, Schottky diodes, and high frequency field effect transistors (FETs). Additionally, there are many extensions of simple AlN and GaN materials we can deposit, including various dopant schemes, and we can apply some of our deposition technologies to new materials such as ZnBr2 an

Extent of SBIR involvement

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Synopsis: Awardee Business Condition

Employee Range
15-19
Revenue Range
1.5M-2M
VC funded?
Yes
Public/Private
Privately Held
Stock Info
----
IP Holdings
20-24

Awards Distribution by Agency

Most Recent SBIR Projects

Year Phase Agency Total Amount
2022 2 AF $899,997
Project Title: High Responsivity Lateral GaN Switch
2022 2 NASA $922,883
Project Title: Rad-Hard Ga2O3 Diodes
2022 1 NASA $160,000
Project Title: Radiation-Tolerant Vertical GaN Diodes
2022 1 MDA $149,999
Project Title: Low-Cost Manufacturing of High Quality GaN Substrates
2021 2 AF $800,000
Project Title: Pulsed Sputter Deposition (PSD) for Efficient Doping in Gallium Nitride (GaN) Epiwafers

Key People / Management

  Keith R Evans -- CEO

  Jerome Cuomo -- Founding partner

  Drew Hanser -- Chief Technical Officer and Vice President of Business Development

  Jacob Leach -- CSO

  Robert Metzger -- CTO

  Gregory Mulholland

  Tanya Paskova

  Edward Preble

  Edward R Pupa

  Paul Quayle

  Thomas Schneider

  Heather Splawn -- Chief Operating Officer & VP Finance, Member Board of Directors

  Kevin Udwary -- Director of Engineering

  N Mark Williams