Novel Structure for Efficient and Reliable Medium Voltage Silicon Carbide (SiC) Power Devices
Award last edited on: 5/26/22

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Principal Investigator
Adam Morgan

Company Information

Nomis Power Group LLC

22 Appletree Lane
Newtonville, NY 12110
   (518) 944-3910
Location: Single
Congr. District: 20
County: Albany

Phase I

Contract Number: 2126732
Start Date: 11/15/21    Completed: 10/31/22
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The broader impact/commercial potential of this Small Innovation Research (SBIR) Phase I project is to improve the efficiency and reliability power conversion systems (PCSs) while also reducing the complexity and cost. System builders and end-users of power electronics for PCS may benefit from proposed advancements in power semiconductor technology that are translated to cheaper and more resilient and sustainable electricity generation, distribution, and consumption. The interconnections of distributed energy resources and energy storage systems within DC (direct current) micro-grids and interfaces between DC micro-grids and legacy AC (alternating current) distribution grid networks will be made simpler, more efficient, and more reliable when the proposed power semiconductor devices become ubiquitous within future PCS.This Small Business Innovation Research (SBIR) Phase I project will improve advanced power semiconductor processing techniques. Specifically, the project focuses on: 1) developing a reliable semiconductor-based, high power electronic switch in the form of a SiC MOSFET (Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor), 2) optimizing the electronic switch parameters to achieve the best trade-off between efficiency and reliability, and 3) fully characterizing the electrical performance of the electronic switch. The research will involve the design of experiments to determine the optimal set of electronic switch parameters that take into account manufacturing limitations of the semiconductor processing equipment. The teams seeks to produce a functioning semiconductor-based, high power electronic switch that is capable of operating more reliably and more efficiently than what is presently available in the market. The team also seeks to enable even higher power electronic switches to be made by means of scaling the resultant SiC MOSFET technology.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

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