SBIR-STTR Award

Achromatic microbeams for integrated circuit fabrication
Award last edited on: 3/27/2002

Sponsored Program
SBIR
Awarding Agency
NSF
Total Award Amount
$263,789
Award Phase
2
Solicitation Topic Code
-----

Principal Investigator
Frederick W Martin

Company Information

Nanobeam Corporation (AKA: Microscope Assoc Inc)

50 Village Avenue
Dedham, MA 02026
   (781) 326-2288
   admin@nbeam.com
   www.nbeam.com
Location: Single
Congr. District: 08
County: Norfolk

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
1984
Phase I Amount
$39,900
Chromatic aberration Ili-nits the current density which can be produced bv focused ion beam systems utilizing electrost@itic lenses. Studv of systems coi-nprising a liquid metal l'icid ionization source and an @ichronlatic quadrupole lens doublet offers the prospect of overcoming this limitation. Research objectives in Phase I include implementation ol' methods to compensate defects other than chromatic @iberrittioii, @ind the experimental deinonstr@ition or Lin achroiliatically l'ocused beaten with a diameter measured in najioiiieters. Research objectives of' Phase 11 include design @iiid construction of' achromatic lenses optimized for semiconductor applications, and their use in an experimental system with a probe size of' about 10 manometers and with high current densitv. Decreased feature size is an important goil in the I'abrica tion ol' integrated circuits. In @iddit'ion, ioii beam current densities higher than presently obtainable are required l'or niask-free, direct-write doping and especiiliv t'or lithography of very small circuit features. Accordinglv, the potential application of the research is to fabricatioii of' highly complex integrated circuits.The potential commercial application as described by the awardee: Small, high-current ion beams are expected to become of widespread future use in integrated circuit i-nanufacture. In Phase III the results of the proposed research may be transferred to the existing U.S. manufacturers of ion beam equipment, located nearby in suburban Boston.

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
1986
Phase II Amount
$223,889
___(NOTE: Note: no official Abstract exists of this Phase II projects. Abstract is modified by idi from relevant Phase I data. The specific Phase II work statement and objectives may differ)___ Chromatic aberration Ili-nits the current density which can be produced bv focused ion beam systems utilizing electrost@itic lenses. Studv of systems coi-nprising a liquid metal l'icid ionization source and an @ichronlatic quadrupole lens doublet offers the prospect of overcoming this limitation. Research objectives in Phase I include implementation ol' methods to compensate defects other than chromatic @iberrittioii, @ind the experimental deinonstr@ition or Lin achroiliatically l'ocused beaten with a diameter measured in najioiiieters. Research objectives of' Phase 11 include design @iiid construction of' achromatic lenses optimized for semiconductor applications, and their use in an experimental system with a probe size of' about 10 manometers and with high current densitv. Decreased feature size is an important goil in the I'abrica tion ol' integrated circuits. In @iddit'ion, ioii beam current densities higher than presently obtainable are required l'or niask-free, direct-write doping and especiiliv t'or lithography of very small circuit features. Accordinglv, the potential application of the research is to fabricatioii of' highly complex integrated circuits.The potential commercial application as described by the awardee: Small, high-current ion beams are expected to become of widespread future use in integrated circuit i-nanufacture. In Phase III the results of the proposed research may be transferred to the existing U.S. manufacturers of ion beam equipment, located nearby in suburban Boston.