SBIR-STTR Award

High Power Phase Shifters
Profile last edited on: 4/6/06

Program
SBIR
Agency
Navy
Total Award Amount
$698,268
Award Phase
2
Principal Investigator
Zygmond Turski
Activity Indicator

Company Information

F & H Applied Science Associates Inc

900 Briggs Road Suite 320
Mount Laurel, NJ 08054
   (856) 235-6781
   zturski@fhasa.com
   www.fhasa.com
Multiple Locations:   
Congressional District:   03
County:   Burlington

Phase I

Phase I year
2004
Phase I Amount
$99,658
Recent advent, and significant progress made in the wide-band-gap semiconductor technology offer today a promise for a superior high power phase shifter. More specifically, emerging Gallium Nitrate (GaN) HEMT devices are shown to operate in extreme temperatures (~600C), exhibiting high breakdown voltages (~100V) and high current densities (~1.5A/mm). In order to meet these challenging technical requirements in a cost effective manner, F&H proposes to develop a GaN HEMT based MMIC high power phase shifter. During the Phase I of this program GaN HEMT device switch characteristics will be measured and modeled. Models derived will be synthesized with appropriate phase shift elements, and overall performance will be optimized in S-Band. The results will be empirically verified using discrete GaN HEMT devices in lumped element phase shifter circuits. Ultimately, the feasibility of a GaN HEMT based high power phase shifter will be determined. In addition to meeting Navy requirements for shipboard radar, cost effective MMIC high power phase shifters will enable migration of many fixed antennae to beam steered versions to include LMDS, cellular (3G & 4G) and satellite applications. Vast markets associated with these applications will naturally lead to economy of scale pricing, in line with Navy objectives

Phase II

Phase II year
2005 (last award dollars: 2005)
Phase II Amount
$598,610
Recent advent and significant progress made in Wide-Band-Gap (WBG) semiconductor technology offers today promise for a superior high power phase shifter. More specifically, our Phase-I results substantiate that premise for SiC PIN diode. Using model of a 400V SiC PIN diode we have simulated each of the 5-bits, and a complete 5-bit phase shifter, demonstrating the feasibility of the target, 1dB Insertion Loss, and 20% bandwidth in S-band. Additionally, SiC devices have been shown to operate at high current density (~.5A/mm), and extreme temperatures (~600°C). In order to meet Navy requirements in a cost effective manner, F&H proposes to develop a SiC PIN Diode-based MMIC phase shifter. During the Phase-II F&H will design, build, and demonstrate a 5-bit digital, high power MIC phase shifter prototype, using specially developed, discrete SiC PIN diodes in lumped element circuits. Upon performance verification, the MMIC implementation will be considered in the Phase-III. In addition to meeting Navy requirements for shipboard radar, cost effective MMIC high power phase shifters will enable migration of many fixed antennae to beam steered versions, to include LMDS, cellular (3G&4G) and satellite applications. Vast markets associated with these applications will naturally lead to economy-of-scale pricing, in line with Navy objectives.

Benefit:
The proposed SiC implementation technology will enable fast (~100 µsec) beam scanning for the emerging Navy radar applications. The MMIC embodiment and large commercial volumes in applications such as 3G & 4G cellular, LMDS, and mobile satellite terminals will lead to an economy of scale pricing in line with the Navy objectives.

Keywords:
WBG, SiC, Beam-steering, PIN, phased-arrays, high-power, phase shifter