SBIR-STTR Award

Non-Volatile Thin-film Semiconductor Mass Memory
Award last edited on: 3/12/2002

Sponsored Program
SBIR
Awarding Agency
NASA
Total Award Amount
$70,000
Award Phase
1
Solicitation Topic Code
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Principal Investigator
Wolodymyr Czubatyji

Company Information

Energy Conversion Devices Inc (AKA: ECD Ovonics)

3800 Lapeer Road
Auburn Hills, MI 48326
   (248) 293-0440
   ovonic@aol.com
   www.energyconversiondevices.com
Location: Multiple
Congr. District: 11
County: Oakland

Phase I

Contract Number: ----------
Start Date: 00/00/00    Completed: 00/00/00
Phase I year
1998
Phase I Amount
$70,000
This program will further develop a new, proprietary, radiation-hard, low-power, high-density, non-volatile semiconductor memory technology with the potential to address NASA program needs for space qualifiable mass memory. The devices are based on thin-film structural phase-change memory materials, related to those currently used in rewriteble optical disks. Prototype devices have already demonstrated extended programming endurance (in excess of 1013 cycles), low voltage operation ( < 3 V), and high programming speed (less than 50 nsec). Research proposed for Phase I will investigate the scaling of programming energy with device size and demonstrate operational test structures suitable for integration into memory arrays using 0.18 micrometer photolithography.

Potential Commercial Applications:
The new thin-film non-volatile memory technology can form the basis for a range of low-cost, high-density mass storage devices, initially replacing FLASH EEPROM, and eventually, possibly also replacing DRAM and SRAM type memories. Their fundamentally robust, radiation-hard characteristics will allow them to address critical aerospace and military needs as well as a range of portable consumer electronics applications.

Phase II

Contract Number: ----------
Start Date: 00/00/00    Completed: 00/00/00
Phase II year
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Phase II Amount
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