Semiconductor light sources and optoelectronics are currently limited in wavelength to the visible and infrared portions of the spectrum. The lowest wavelength devices currently available are blue light emitting diodes (LEDs), fabricated from 6H-SiC. However, SiC has an indirect band gap which limits the efficiency of optical devices. Recently, reports suggest that microcrystalline pores in semiconductors can cause bandgap widening and direct bandgap transitions in indirect bandgap materials. This project will develop ultraviolet (UV) and near- ultraviolet (near-UV) optoelectronics capability in SiC by fabricating quantum-sized porous structures in SiC. The goal of Phase I is to form porous SiC layers that exhibit UV luminescence. In Phase II, a UV optoelectronic device, namely a UV LED, will be developed and tested.
Potential Commercial Applications: UV-emitting porous SiC will extend the capability of optoelectronics by including lower wavelengths in semiconductor light sources and optoelectronic devices. Among its applications, a UV LED can be used in high spacial resolution optical storage and, in optical communication systems, as a light source compatible with UV fibers and receiv- ers.
