This proposal discusses materials and related device research in the area of wide-bandgap compound semiconductors in the III-N system. The major tasks involve the growth of AlGaN/GaN heterojunction device structures and the development of improved materials. These devices are important for a wide variety of high-performance electronic systems, including high-power and high-frequency microwave and millimeter-wave amplifiers for phased-array radars, satellite communications, digital radio, wireless local-area networks, and wireless communications base stations, as well as for high-temperature and radiation-hardened electronics. While there is great potential for these applications, several important materials issues remain to be resolved. The current state-of-the-art performance for nitride heterojunction field-effect transistors is still below that theoretically projected for this material system. In Phase I, Magellus proposes to develop novel device structures in this program that are projected to provide improved performance at high currents and high powers. In Phase II, Magellus will develop stable materials and device process technologies that will be used to develop production models for devices and circuits based upon these devices. The Goals in this second Phase will be to demonstrate useful devices operating above 5W/mm with high yield and efficiencies above 60% with the reliability required for initial system insertion.
