ZnO material is a wide bandgap semiconductor and a piezoelectric material as well. ZnO is compatible with current Si process technology. Large area, high quality ZnO films can be deposited by MOCVD technique on various substrates, such as sapphire and Si at low growth temperature. We propose to develop a new smart sensor technology by integration of multifunctional ZnO sensors with Si IC for imaging applications. In this Small Business Innovation Research Phase I project, we propose to grow high quality, epitaxial ZnO films on sapphire substrates using advanced MOCVD technique at low growth temperature. ZnO MSM and Schottky type of photodetectors and photodetector arrays will be fabricated and characterized. P-type doping of ZnO films using N ions will be investigated as well in proposed Phase I program. Our Phase II efforts will be focused on the smart sensors by integration of the ZnO sensor with Si IC. We plan to commercialize the ZnO smart sensors in Phase III. Low power, portable, compact, multifunctional, monolithic ZnO smart sensor arrays (integrated with Si IC) are the optimum goal of the proposed work. The success of the project will enhance US defense capability and broaden sensor commercial market.
Keywords: Sensors FPAS image Sensors, Zno photdetectors, Mocvd
