SBIR-STTR Award

Diamond Heteroepitaxy Using Nanometric Surface Preparation
Award last edited on: 9/4/2002

Sponsored Program
SBIR
Awarding Agency
DOD : MDA
Total Award Amount
$58,676
Award Phase
1
Solicitation Topic Code
BMDO94-014
Principal Investigator
Mary Anne Plano

Company Information

Crystallume Corporation

3397 De La Cruz Boulevard
Santa Clara, CA 95054
   (408) 653-1700
   efrancis@crystallume.com
   www.crystallume.com
Location: Single
Congr. District: 17
County: Santa Clara

Phase I

Contract Number: F33615-94-C-2447
Start Date: 5/19/1994    Completed: 11/19/1994
Phase I year
1994
Phase I Amount
$58,676
One of the drawbacks of using single crystal diamond is the small size and expense of using natural diamond substrates. Single crystal natural diamonds are readily available in sizes up to 5 mm x 5 mm. For larger sizes the costs are prohibitive. These sizes are inconvenient to work with in terms of large scale fabrication of electronic devices. One solution to this problem is to be able to do diamond heteroepitaxy, i.e. grow single crystal diamond on alternate substrates. Another approach is to fabricate low coordination surfaces by using nanometric surface preparation. In this research program we propose the development of approaches for the heteroepitaxial growth of single crystals of diamond on metal substrates such as copper and molybdenum and on silicon using nanometric surface preparation.

Phase II

Contract Number: ----------
Start Date: 00/00/00    Completed: 00/00/00
Phase II year
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Phase II Amount
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