SBIR-STTR Award

Bulk Growth Of In(1-x)Ga(x)As
Award last edited on: 9/5/2002

Sponsored Program
SBIR
Awarding Agency
DOD : MDA
Total Award Amount
$547,352
Award Phase
2
Solicitation Topic Code
-----

Principal Investigator
Rowland Ware

Company Information

Ware Technical Services Inc

42 Lorraine Road
Westwood, MA 02090
   (617) 320-0291
   N/A
   N/A
Location: Single
Congr. District: 08
County: Norfolk

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
1992
Phase I Amount
$49,828
This program will develop a method of growing bulk ternary compound semiconductors of uniform composition. The target material of In(1-x)Ga(x)As was chosen because of its immediate use in the growth and fabrication of very high speed HEMT devices. The method should be applicable to other ternary compounds, giving a new field of "substrate engineering" to complement the "bandgap engineering" at present applied by epitaxy. The availability of substrates lattice matched to active layers will reduce strain and improve performance in devices such as II-VI lasers, solar cells, and HBTs.

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
1993
Phase II Amount
$497,524
This program will develop a method of growing bulk ternary compound semiconductors of uniform composition. The target material of In(1-x)Ga(x)As was chosen because of its immediate use in the growth and fabrication of very high speed HEMT devices. The method should be applicable to other ternary compounds, giving a new field of "substrate engineering" to complement the "bandgap engineering" at present applied by epitaxy. The availability of substrates lattice matched to active layers will reduce strain and improve performance in devices such as II-VI lasers, solar cells, and HBTs.-