SBIR-STTR Award

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Thin Film High-k Dielectric Semiconductor Materials Development for IRFPAs
Award last edited on: 10/11/2017

Sponsored Program
SBIR
Awarding Agency
DOD : Army
Total Award Amount
$99,999
Award Phase
1
Solicitation Topic Code
A16-039
Principal Investigator
Quentin Diduck

Company Information

Ballistic Devices Inc

904 Madison Street
Santa Clara, CA 95050
   (585) 451-5755
   N/A
   www.ballisticdevices.com
Location: Single
Congr. District: 17
County: Santa Clara

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
2016
Phase I Amount
$99,999
A novel high capacitance density structure that exceeds 80fF/micron-sq is presented. The design of the system is compatible with modern CMOS technology and will enable a circuit designer to produce high accuracy readout-IC's for IRFPA's. The metal-insulator-metal capacitor utilizes a high-k dielectric system that is within the thermal budget of a CMOS process. Additionally, an enhanced design is suggested that will allow for the capacitance density to exceed 120 fF/micron-sq. This provides a roadmap toward further innovation and extension of the technology beyond IRPFA's.

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
----
Phase II Amount
----