SBIR-STTR Award

Advanced packaging and Integration Technologies for Microsensors
Award last edited on: 9/20/2002

Sponsored Program
SBIR
Awarding Agency
DOD : Army
Total Award Amount
$655,543
Award Phase
2
Solicitation Topic Code
A93-090
Principal Investigator
Anthony D Kurtz

Company Information

Kulite Semiconductor Products Inc

One Willow Tree Road
Leonia, NJ 07605
   (201) 461-0900
   solomon@kulite.com
   www.kulite.com
Location: Multiple
Congr. District: 05
County: Bergen

Phase I

Contract Number: DAAL01-94-C-3414
Start Date: 1/31/1994    Completed: 1/31/1996
Phase I year
1994
Phase I Amount
$69,543
A novel sensor technology is suggested which has significantadvantages in the areas of packaging and integration of sensors. It isproposed to develop this technology for pressure transducers. The keyinnovation of the process is the bonding of a sensor to a planarcover-wafer which contains through-wafer interconnects. The sensor ishermetically sealed within the cover and is thus protected from the outsideenvironment. The encapsulated sensor can be surface mounted to a header orboard without external wires. This allows part of the packaging to beaccomplished at the wafer level, enabling the benefits of batch fabricationto be applied to the package. The cover-wafer can also contain signalconditioning electronics to amplify and compensate the sensor's output.Integration is thus achieved at the wafer level, resulting in a reducedpin-count, which will lower the cost and improve reliability. This "smartsensor" is integrated vertically, thus allowing the independentoptimization of the sensor and electronics with the coupling of the two.

Phase II

Contract Number: DAAL01-95-C-3923
Start Date: 8/10/1995    Completed: 8/10/1997
Phase II year
1995
Phase II Amount
$586,000
A novel semiconductor device encapsulation technology is suggested which has significant advantages in the areas of environmental protection,heat dissipation, hermeticity, and overall packaging. The key innovation of the process is the bonding of a device wafer (sensor or IC) to a planar cover-wafer which contains through-wafer interconnects. The cover wafer and interconnects are fabricated entirely from Si using essentially standard semiconductor processing technology. The device wafers are sealed within the cover and are thus protected from the outside environment. The encapsulated sensors and ICs can be surface mounted to a header or board without external wires. This allows part of packaging to be accomplished at the wafer level, enabling the benefits of batch fabrication to be applied to the package. In Phase I, Si cover-wafers with through-wafer interconnects were fabricated successfully, thus demonstrating the feasibility of the concept.