Lawrence Semiconductor Research Laboratory, Inc. supplies custom epitaxial growth as a service for commercial organizations as well as for government and academic use. We also supply research and development for new semiconductor materials. Areas of epitaxial growth include: Selective and non-selective Silicon, Selective and non-selective Silicon-Germanium (Si1-xGex), Selective and non-selective Silicon-Germanium-Carbon (Si1-x-yGexCy), Siliconon- Insulator (SOI), Etch stop layers (SiGeB, SiGeBC, Si:B, SiGeC), Si1-xGex on Insulator, (SiGeOI), Silicon on Sapphire (SOS), Germanium (Ge) layers, Novel Group IV materials. Applications include electronic and non-electronic structures. Some of our epitaxial technology is being applied to micro machining of mechanical elements (such as precision thin membranes, accelerometers, and gyroscopes) in automotive, aerospace, and medical applications.
