SBIR-STTR Award

In this effort MONDE Wireless will fabricate N-polar GaN transistors on low-cost, scalable substrates using state of the art processes suitable for mm-wave devices, with an epitaxy design which is capable of meeting the 4 watt per millimeter and 25 percent power-added efficiency program metrics. MONDE Wireless will carry out detailed characterization of these devices including noise parameter measurements at 30 GHz and 83 GHz and build the corresponding circuit and noise models for analysis and to support of the Phase II circuit demonstrations.

Benefit:
Nitrogen-polar gallium nitride devices on traditional high-cost silicon carbide substrates have demonstrated excellent continuous-wave power performance at 94 GHz which makes them promising as a power amplifier for a range of millimeter-wave frequencies including in the E-band. Though expected to perform well, their applicability to other front-end circuitry such as low-noise and switch circuits and the use of low-cost scalable substrates has not yet been evaluated in detail, nor have circuits been demonstrated. Demonstrating a single device technology with excellent low-noise and switch performance while also being capable of good power performance within the same epi structure can greatly simplify system design by having a single-chip transmit/receive module solution providing a benefit of higher performance and lower cost. Under this Phase I effort MONDE Wireless will evaluate nitrogen-polar gallium nitrides suitability for use in low-noise amplifier and switch front-end circuits at E-band which will allow planners to evaluate it as a technology for these applications. The use of low-cost, area-scalable substrates will also be evaluated for realizing these applications, which if successful will be a substantial benefit in showing a path for low-cost commercial applications. Potential commercial applications of this work include front-ends for mm-wave base stations, satellite communications, backhaul, and radar.

Keywords:
HEMT, HEMT, GaN, N-polar, Wireless, Amplifier, mm-wave, Noise

In this effort MONDE Wireless will design and fabricate N-polar GaN MMICs on low-cost, scalable substrates using state of the art processes suitable for mm-wave devices, with an epitaxy design which is capable of providing high power performance. MONDE Wireless will carry out detailed characterization of the MMIC performance metrics. Device equivalent circuit models will be refined and improved throughout the effort. MONDE will analyze application requirements and target designs towards applications.

Benefit:
Nitrogen-polar gallium nitride devices on traditional high-cost silicon carbide substrates have demonstrated excellent continuous-wave power performance at 94 GHz which makes them promising as a power amplifier for a range of millimeter-wave frequencies including in the E-band. Though expected to perform well, their applicability to other front-end circuitry such as low-noise and switch circuits and the use of low-cost scalable substrates has not yet been evaluated in detail, nor have circuits been demonstrated. Demonstrating mm-wave frontend circuits with excellent performance based on a single epitaxy structure on a low-cost substrate can greatly simplify system design by having a single-chip transmit/receive module solution providing a benefit of higher performance and lower cost. The utility of low-cost, area-scalable substrates would be a substantial benefit in showing a path for low-cost commercial applications. Potential commercial applications of this work include mm-wave backhaul, mm-wave base stations, satellite communications, and radar.

Keywords:
GaN, Wireless, mm-wave, Noise, Amplifier, N-polar, Switch