SBIR-STTR Award

Heterojunction Bipolar Transistors Featuring Epitaxial ZnGeN
Award last edited on: 2/29/2012

Sponsored Program
SBIR
Awarding Agency
DOD : MDA
Total Award Amount
$60,034
Award Phase
1
Solicitation Topic Code
SDIO93-014
Principal Investigator
H Paul Maruska

Company Information

Spire Corporation

One Patriots Park
Bedford, MA 01730
   (781) 275-6000
   info@spirecorp.com
   www.spirecorp.com
Location: Multiple
Congr. District: 06
County: Middlesex

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
1993
Phase I Amount
$60,034
Spire proposes to develop for the first time deposition techniques for creating thin films of zngen(2) of high crystalline perfection to serve as the base in high temperature heterojunction transistors. The final transistor structure, to be demonstrated in phase ii, will rely on gallium nitride (gan) as the emitter and collector sections. Zngen(2) is an excellent candidate for serving as the transistor base, because it has a smaller bandgap than gan, as determined earlier by maruska, the proposed principal investigator. Zngen(2) is very closely lattice matched to gan, which should allow preparation with low densities of dislocations, a stringent requirement for keeping minority carrier lifetimes in the base at very high levels, a prerequisite for high gain. Phase I investigations will center on determining advanced metalorganic chemical vapor deposition conditions, basically the substrate temperature and the zn/ge ratio in the gas phase, which will yield excellent quality zngen(2) films. These films willl be characterized by several structural, optical, and electrical measurements, to provide feedback for optimizing growth parameters. In phase ii, conditions for depositing a gan emiiter of high crystalline perfection onto the zngen(2) base will be established. Fabrication of heterojunction transistors will be undertaken, and their operating characteristics will be evaluated. Extension of the growth technology to deposition of the quaternary zn(ge(1-x)si(x))n(2) will be investigated.

Keywords:
Heterojunction Bipolar Transistors Epitaxial Zngen

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
----
Phase II Amount
----