SBIR-STTR Award

A Novel Crystal Growth Technology for Production of ZnO Single Crystal Substrates for Light Emitters and Detectors
Award last edited on: 1/11/2010

Sponsored Program
SBIR
Awarding Agency
NSF
Total Award Amount
$150,000
Award Phase
1
Solicitation Topic Code
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Principal Investigator
Shaoping Wang

Company Information

Fairfield Crystal Technology LLC

8 South End Plaza
New Milford, CT 06776
   (860) 354-2111
   info@fairfieldcrystal.com
   www.fairfieldcrystal.com
Location: Single
Congr. District: 05
County: Litchfield

Phase I

Contract Number: ----------
Start Date: ----    Completed: ----
Phase I year
2009
Phase I Amount
$150,000
This Small Business Innovation Research (SBIR) Phase I project will investigate a novel technique for growing large-diameter, high-quality ZnO single crystals. ZnO single crystal substrates are suitable for fabrication of epitaxial structures for both GaN-based and ZnO-based devices, such as light emitters and detectors, as well as for high power, high temperature and high frequency devices. The proposed growth technique has the potential to produce large diameter, high quality ZnO bulk single crystal boules in an efficient manner at a low cost. Commercialization of high-quality, low-cost ZnO single crystal substrates may have a dramatic impact on the development and commercialization of both GaN-based and ZnO-based devices for a variety of applications

Phase II

Contract Number: ----------
Start Date: ----    Completed: ----
Phase II year
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Phase II Amount
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