ECR-Ion Beam Deposition for III-Nitride Semiconductors

 Project Summary
Program: SBIR Agency: MDA
Phase I Year: 1993 Phase II Year: ---
Phase I Dollars: Phase II Dollars:
Principal Investigator:

   Phase I Abstract   
We propose to develop and study a new manufacturing technology for the epitaxial growth of multilayers of III-Nitrides semiconductors (GaN and AlGaN) at temperatures substantially lower than presently .....