Radiation Fault Analysis for 45 Nanometer CMOS-SOI VLSI Circuits

 Project Summary
Program: SBIR Agency: DTRA
Phase I Year: 2010 Phase II Year: ---
Phase I Dollars: Phase II Dollars:
Principal Investigator:

   Phase I Abstract   
OBJECTIVE

Keywords:
Single-Event Effects, Single-Event Upset, Single-Event Transients, Total Ionizing Dose, Displacement Damage, Nano-Technology